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MOSFET

  • FGA15N120 IGBT
    FGA15N120 IGBT
    Features NPT Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), typ = 1.9V IC = 15A and TC = 25°C Low switching loss: Eoff, typ = 0.6mJ IC = 15A and TC = 25°C Extremely enhanced avalanche capability TO-3P PACKAGE Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the... Features NPT Trench Technology, Positive temperature coefficient Low saturation ...
  • H20R1203 IGBT
    H20R1203 IGBT
    Features Low saturation voltage: VCE(sat), typ = 1.48V IC = 20A and TC = 25°C TO-247 PACKAGE Applications : 1. Inductive cooking 2. Inverterized microwave ovens 3. Resonant converters 4. Soft switching applications Features Low saturation voltage: VCE(sat), typ = 1.48V IC = 20A and TC = 25°C T...
  • IRF510 MOSFET N-Channel Power MOSFETs
    IRF510 MOSFET N-Channel Power MOSFETs
    This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Features • 5.6A, 100V •r DS(ON) = 0.540 ? • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering... This N-Channel enhancement mode silicon gate power field effect transistor is an...
  • IRF530 14A,100V N-Channel Power MOSFET
    IRF530 14A,100V N-Channel Power MOSFET
    These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation Features • 14A, 100V •r DS(ON) = 0.160 ? • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for... These are N-Channel enhancement mode silicon gate power field effect transistors...
  • IRF540 MOSFET N-Channel Power MOSFETs
    IRF540 MOSFET N-Channel Power MOSFETs
    IRF540 MOSFET N-Channel Power MOSFETs Description: These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver-tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high... IRF540 MOSFET N-Channel Power MOSFETs Description: These are N-Channel enhancem...
  • IRF9540N MOSFET P-Channel Power MOSFETs
    IRF9540N MOSFET P-Channel Power MOSFETs
    Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in... Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperatur...
  • IRF9640N MOSFET P-Channel Power MOSFET
    IRF9640N MOSFET P-Channel Power MOSFET
    IRF9640N MOSFET P-Channel Power MOSFET Third generation power MOSFET s from Vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. ? The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance thro ughout the industry. FEATURES •... IRF9640N MOSFET P-Channel Power MOSFET Third generation power MOSFET s from Vis...
  • IRFZ44 MOSFET N-Channel Power MOSFETs
    IRFZ44 MOSFET N-Channel Power MOSFETs
    IRFZ44 - Power MOSFET Vdss=55V Rds(on)=17.5mohm Id=49A Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance thro ughout the industr IRFZ44 - Power MOSFET Vdss=55V Rds(on)=17.5mohm Id=49A Third generation Power M...
  • IRFZ48 MOSFET N-Channel Power MOSFETs
    IRFZ48 MOSFET N-Channel Power MOSFETs
    IRFZ48 MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance thro ughout the industry. IRFZ48 MOSFET Third generation Power MOSFETs from Vishay provide the designer wi...